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| Preliminary Technical Information High Voltage IGBTs w/Diode IXGH24N170AH1 IXGT24N170AH1 VCES = IC25 = VCE(sat) tfi(typ) = TO-247 (IXGH) 1700V 24A 6.0V 40ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TC = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C TC = 90C TC = 25C, 1ms VGE = 15V, TVJ = 125C, RG = 10 Clamped Inductive Load TJ = 125C, VCE = 1200V, VGE = 15V, RG = 22 TC = 25C Maximum Ratings 1700 1700 20 30 24 16 75 ICM = 50 0.8 * VCES 10 250 -55 ... +150 150 -55 ... +150 V V V V A A A A V s W C C C C C Nm/lb.in. g g Features Optimized for Low Conduction and Switching Losses Anti-Parallel Ultra Fast Diode International Standard Packages Advantages High Power Density Low Gate Drive Requirement V 5.0 V 100 A 1.5 mA 100 4.5 TJ = 125C 4.8 6.0 nA V V Applications Power Inverters UPS Motor Drives SMPS PFC Circuits Welding Machines G = Gate E = Emitter C = Collector TAB = Collector TO-268 (IXGT) G C C (TAB) E G E C (TAB) 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-247 TO-268 300 260 1.13/10 6 4 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC = 250A, VGE = 0V IC = 250A, VCE = VGE VCE = 0.8 * VCES, VGE = 0V VCE = 0V, VGE = 20V IC = 16A, VGE = 15V, Note 1 TJ = 125C Characteristic Values Min. Typ. Max. 1700 3.0 (c) 2009 IXYS CORPORATION, All Rights Reserved DS99413A(05/09) IXGH24N170AH1 IXGT24N170AH1 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK Inductive Load, TJ = 125C IC = 24A, VGE = 15V VCE = 0.5 * VCES, RG = 10 Note 1 Inductive Load, TJ = 25C IC = 24A, VGE = 15V VCE = 0.5 * VCES, RG = 10 Note 1 IC = 16A, VGE = 15V, VCE = 0.5 * VCES IC = 24A, VCE = 10V, Note 2 VCE = 25V, VGE = 0V, f = 1MHz Characteristic Values Min. Typ. Max. 13 22 2860 198 58 140 18 60 21 36 2.97 336 40 0.79 23 31 3.60 360 96 1.47 0.21 S pF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.50 C/W C/W e TO-247 (IXGH) Outline 1 2 3 P Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain Dim. 80 1.50 (TO-247) Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 (IXGT) Outline Reverse Diode (FRED) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VF IRM trr IRM trr RthJC Notes: 1. 2. Switching times may increase for VCE (Clamp) > 0.5 * VCES, higher TJ or increased RG. Pulse Test, t 300s; Duty Cycle, d 2%. IF = 20A, VGE = 0V TJ = 125C Characteristic Values Min. Typ. Max. 2.5 2.5 15 80 20 200 2.95 V V A ns A ns 0.9 C/W IF = 20A, -diF/dt = 150A/s, VR = 1200V, VGE = 0V TJ = 125C PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH24N170AH1 IXGT24N170AH1 Fig. 1. Output Characteristics @ 25C 48 44 40 36 VGE = 15V 13V 11V 180 160 9V 140 120 11V VGE = 15V 13V Fig. 2. Extended Output Characteristics @ 25C IC - Amperes 32 28 24 20 16 12 8 4 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 5V IC - Amperes 7V 100 80 60 40 20 5V 0 0 5 10 15 20 25 30 7V 9V VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ 125C 48 44 40 36 VGE = 15V 13V 11V 9V 1.8 VGE = 15V 1.6 Fig. 4. Dependence of VCE(sat) on Junction Temperature IC - Amperes 32 28 24 20 16 12 8 4 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 5V 7V VCE(sat) - Normalized 1.4 1.2 1.0 0.8 I C = 48A I C = 24A I 0.6 0.4 -50 -25 0 25 50 C = 12A 75 100 125 150 VCE - Volts TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 9.5 8.5 7.5 I C Fig. 6. Input Admittance 60 55 50 45 TJ = 25C = 48A IC - Amperes 40 35 30 25 20 15 10 TJ = 125C 25C - 40C VCE - Volts 6.5 5.5 24A 4.5 3.5 12A 2.5 5 6 7 8 9 10 11 12 13 14 15 5 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 VGE - Volts VGE - Volts (c) 2009 IXYS CORPORATION, All Rights Reserved IXGH24N170AH1 IXGT24N170AH1 Fig. 7. Transconductance 36 TJ = - 40C 32 28 25C 125C 16 14 12 VCE = 850V I C = 24A I G = 10mA Fig. 8. Gate Charge g f s - Siemens 24 20 16 12 8 4 0 0 10 20 30 40 50 VGE - Volts 60 70 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 IC - Amperes QG - NanoCoulombs Fig. 9. Capacitance 10,000 60 Fig. 10. Reverse-Bias Safe Operating Area f = 1 MHz 50 Capacitance - PicoFarads Cies 1,000 40 IC - Amperes Coes 100 30 20 TJ = 125C Cres 10 0 5 10 15 20 25 30 35 40 10 RG = 10 dV / dt < 10V / ns 0 200 400 600 800 1000 1200 1400 1600 1800 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance 1.00 Z(th)JC - C / W 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: G_24N170(6N)05-07-09 |
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